Compare Model Drawings, CAD & Specs Availability Price
Adjustable Optical Receiver, 300-1050 nm Silicon Detector, 10 MHz, 8-32
$1,323
In Stock
In Stock
Adjustable Optical Receiver, 300-1050 nm Silicon Detector, 10 MHz, M4
$1,323
In Stock
In Stock
Adjustable Optical Receiver, 900-1700 nm InGaAs Detector, 10 MHz, 8-32
$1,497
In Stock
In Stock
Adjustable Optical Receiver, 900-1700 nm InGaAs Detector, 10 MHz, M4
$1,467
In Stock
In Stock

Specifications

Features

High Speed Receiver Physics

With the advancement of high-transmission-rate systems and short-pulse lasers, many applications now require high time-resolution or equivalently, high frequency-bandwidth optical detection. High-speed photoreceivers are critical for the measurement of the frequency and/or time response of optical systems. In the optical domain, this can include measuring the pulses of mode-locked laser systems, detecting the data stream of a frequency-multiplexed communication system, or providing increased resolution in dynamic, pump-probe spectroscopy. The minimum rise time for high-speed photoreceivers is less than 10 ps. Consequently, for optical signals with faster responses, optical gating techniques are required. In the frequency domain, applications for high-speed photoreceivers include laser heterodyning experiments and millimeter-wave signal generation. The maximum frequency bandwidths for such detectors can exceed 50 GHz in well-designed devices.

Based on the discussion above, diffusion of carriers to the depletion region is a relatively slow process in reverse biased p-n junctions that could serve to limit the response time of a photoreceiver. To minimize this effect, a p-i-n photodiode is typically utilized where an un-doped intrinsic layer is sandwiched between the p and n layers in a p-n junction (see above figure). This structure effectively widens the depletion layer. This results in a greater proportion of the generated current being carried by the faster drift process instead of diffusion. The increased depletion width also allows for a reduction in the RC time constant(via a decreased junction capacitance) and increased area for capturing light. The p-i-n device structure is ubiquitous in high-speed photoreceivers and enables fast rise times and large bandwidths. However, the final measured optical signal will be as slow as the slowest component of a detection system even if a sufficiently fast photoreceiver is employed. Therefore, care should be taken when choosing connectors, cables, an oscilloscope, and a spectrum analyzer to measure a fast optical signal.

Silicon or InGaAs Versions

Silicon models provide wavelength coverage from 300-1050 nm and InGaAs models provide coverage from 900-1700 nm.

10 MHz Versions of our Popular 200 kHz Photoreceivers

In response to customer requests, we’ve extended the bandwidth of our popular 200 kHz photoreceivers to 10 MHz to provide faster photodetection for our customers.

Variable-gain Transimpedance Amplifier

Variable gain of up to 90 dB in 10-dB steps gives you a useful input range from 1 pW to 10 mW. For small signals requiring 80-dB or greater gain, the maximum bandwidth is reduced from 10 MHz to 1 MHz.

Adjustable High and Low Pass Filters

The DC/30 setting prevents your signal from going off-scale due to DC amplitude fluctuations, without attenuating fast signals. The high-pass filter can be adjusted to eliminate residual 60-Hz noise, and the independent low-pass filter can be set to dampen noisy signals.

Flexibility for a Wide Range of Applications

The flexibility and high performance of these photoreceivers means that they can be used in a wide range of applications. Use them as low-noise DC-coupled photoreceivers/preamplifiers in servo-control systems requiring near-zero phase shifts. Or use them in lock-in amplifier systems to take advantage of their shot-noise-limited performance and 90-dB maximum gain.