818-BB-27 High Speed Photodetector

The 818-BB-27 High Speed UV Enhanced Silicon Optical Detector consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large 2.55 mm active diameter and 3 ns rise time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply.

UV-Enhanced Silicon Free Space Detector

The 818-BB-27 consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply.

Optical Post Mounting

An 8-32 threaded hole at the bottom of 818-BB biased photoreceivers allows for optical post mounting.

Handle With ESD Care

These detectors are very susceptible to damage by electrostatic discharge (ESD). Please use ESD protective measures, like the FK-STRAP , when unpacking and handling these devices.

Specifications

Technical Specs

Optical Input

Free Space
Device Type

Biased Detector
Detector Diameter

2.55 mm
Detector Material

UV Enhanced Silicon
Detector Type

PIN
Acceptance Angle

50°
Wavelength Range

200-1100 nm
3 dB Bandwidth

DC to 118 MHz
Rise Time

3 ns
Responsivity

0.56 A/W @ 830 nm
Output Connector

BNC
Amplified

No

Bias Voltage

24 V
Cut-off Frequency

118 MHz
Dark Current

<10nA
Junction Capacitance

<25 pF
Measurement Type

Beam shape, frequency
Reverse Breakdown

150 V
NEP

<0.1 pW/√Hz
Fall Time

3ns
Saturation Current

2.5 mA
Thread Type

8-32 and M4

Optical Input

Free Space
Device Type

Biased Detector
Detector Diameter

2.55 mm
Detector Material

UV Enhanced Silicon
Detector Type

PIN
Acceptance Angle

50°
Wavelength Range

200-1100 nm
3 dB Bandwidth

DC to 118 MHz
Rise Time

3 ns
Responsivity

0.56 A/W @ 830 nm
Output Connector

BNC
Amplified

No

Bias Voltage

24 V
Cut-off Frequency

118 MHz
Dark Current

<10nA
Junction Capacitance

<25 pF
Measurement Type

Beam shape, frequency
Reverse Breakdown

150 V
NEP

<0.1 pW/√Hz
Fall Time

3ns
Saturation Current

2.5 mA
Thread Type

8-32 and M4

Resources & Downloads

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High Speed Photodetector, 200-1100 nm UV-Silicon Detector, 118 MHz