High Speed Photodetector, 300-1100 nm Battery Biased Silicon Detector, 1.2 GHz

Technical Specs

  • Optical Input
    Free Space
  • Detector Diameter
    0.4 mm
  • Active Area
    0.4 mm²
  • Detector Material
    Silicon
  • Detector Type
    PIN
  • Acceptance Angle
    10°
  • Wavelength Range
    300-1100 nm
  • Bandwidth
    >1.2 GHz
  • Rise Time
    <300 ps
  • Responsivity
    0.47 A/W @ 830 nm
  • Output Connector
    BNC
  • Amplified
    No
  • Bias Voltage
    9 V
  • Cut-off Frequency
    1.2 GHz
  • Dark Current
    <0.1 nA
  • Junction Capacitance
    <1.5 pF
  • Measurement Type
    Beam shape, frequency
  • Reverse Breakdown
    20 V
  • NEP
    <0.01 pW/√Hz
  • Fall Time
    <300 ps
  • Saturation Current
    3 mA
  • Thread Type
    8-32 and M4