Nanosecond Photodetector, 350-1000 nm, 0.8 mm Silicon Detector, 1 ns

Technical Specs

  • Optical Input
    Free Space
  • Detector Diameter
    0.8 mm
  • Detector Material
    Silicon
  • Detector Type
    PIN
  • Wavelength Range
    350-1000 nm
  • Rise Time
    1 ns
  • Responsivity
    0.55 A/W
  • Output Connector
    BNC
  • Output Impedance
    50 Ω, 10kΩ, & Open
  • Junction Capacitance
    3 pF
  • Conversion Gain, Maximum
    28 V/W  
  • Saturation Power
    5 mW  
  • Power Requirements
    Internal 9-V battery
  • Thread Type
    8-32 (includes M4 thread adapter)