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high speed photodetector model 1621 for nanosecond photo detection
Nanosecond Photodetector, 350-1000 nm, 0.8 mm Silicon Detector, 1 ns



Silicon or InGaAs Versions

Our Nanosecond Photodetectors utilize a Silicon diode providing wavelength coverage from 350 to 1000 nm or InGaAs providing coverage from 800 to 1700 nm.

User Switchable Load Resistors

The user-switchable 50 Ω or 10 kΩ load resistor lets you optimize for response time or sensitivity. Choose a nanosecond response time with 50-V/A sensitivity, or a slower response time with a higher 10,000 V/A sensitivity. The nanosecond rise time at the 50-Ω load setting is fast enough to see your Q-switched pulses. Or use the 10-kΩ resistor setting for alignment purposes and for detecting lower-power pulses and cw light. We’ve even included an open-circuit setting so you can choose the best gain-bandwidth combination for your application.

9V Battery Powered

This photodetector is powered by a single 9-V battery and includes a convenient battery-check feature. All switches and connectors are located on the top of the photodetector, minimizing the space it requires in your experiment. The BNC connector on the top of the housing keeps the cable out of the beam path and makes it easy to connect it to instruments stored on a shelf above the lab bench.