High Speed Photodetector, 400-900 nm Battery Biased GaAs Detector, 12.5 GHz

Technical Specs

  • Optical Input
    Free Space
  • Active Area
    60 µm
  • Detector Material
    GaAs
  • Detector Type
    PIN
  • Acceptance Angle
    15°
  • Wavelength Range
    500-890 nm
  • 3 dB Bandwidth
    DC to 12.5 GHz
  • Rise Time
    30 ps
  • Responsivity
    0.53 A/W @ 830 nm
  • Output Connector
    SMA
  • Amplified
    No
  • Bias Voltage
    3 V
  • Cut-off Frequency
    >12.5 GHz
  • Dark Current
    <0.5 nA
  • Junction Capacitance
    <0.3 pF
  • Reverse Breakdown
    30 V
  • NEP
    <0.02 pW/√Hz at 830 nm
  • Fall Time
    <30 ps
  • Saturation Current
    10 mA
  • Thread Type
    8-32 and M4

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