The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC connector output. It is a low-cost solution for ultra-fast measurements up to a 15 GHz bandwidth. This detectors are suitable for applications where detector rise time of <25 psec are required for Q-switched and Ultrafast Laser output analysis. The batteries are easily replaceable and by disconnecting the detector from the oscilloscope input, when not in use, you can extend the lifetime of the batteries.
The 818-BB-30, -31, and -35 consist of free-space, small and large area InGaAs detectors, with rise times ranging from 300 ps to 1.5 ns for covering the 1000-1600 nm wavelength range. Each unit includes a built-in bias supply consisting of standard 3 V lithium cells and a 50 ohm BNC connector output. The 818-BB-51 features an extended InGaAs photodetector with a wavelength range of 1475–2100 nm.
An 8-32 threaded hole at the bottom of 818-BB biased photoreceivers allows for optical post mounting.
These detectors are very susceptible to damage by electrostatic discharge (ESD). Please use ESD protective measures, like the FK-STRAP , when unpacking and handling these devices.
The 818-BB-35 and 818-BB-45 photodiode detector modules offer a low-cost solution for ultra-fast measurements offering a 12.5 GHz bandwidth. These detectors are suitable for applications where detector rise time of <25 ps (<30 ps for 818-BB-45) are required for Q-switched and Ultrafast Laser output analysis. These detectors also utilize 3 V lithium cells (supplied).
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