High Speed Photodetector, 830-2150 nm Battery Biased Extended InGaAs Detector, 10 GHz

Technical Specs

  • Optical Input
    Free Space
  • Detector Diameter
    0.040 mm
  • Detector Material
    Extended InGaAs
  • Detector Type
    PIN
  • Acceptance Angle
    20°
  • Wavelength Range
    830-2150 nm
  • 3 dB Bandwidth
    DC to 10 GHz
  • Rise Time
    28 ps
  • Responsivity
    1.3 A/W @ 2.0 µm
  • Output Connector
    SMA
  • Amplified
    No
  • Bias Voltage
    3 V
  • Cut-off Frequency
    >12.5 GHz
  • Dark Current
    <1 u A
  • NEP
    <0.44 pW/√Hz @ 2000 nm
  • Fall Time
    <28 ps
  • Thread Type
    8-32 and M4