High Speed Photodetector, 200-1100 nm Biased UV-Silicon Detector, 200 MHz

Technical Specs

  • Optical Input
    Free Space
  • Detector Diameter
    2.55 mm
  • Detector Material
    UV Enhanced Silicon
  • Detector Type
    PIN
  • Acceptance Angle
    50°
  • Wavelength Range
    200-1100 nm
  • Bandwidth
    >118MHz
  • Rise Time
    3ns
  • Responsivity
    0.56 A/W @ 830 nm
  • Output Connector
    BNC
  • Amplified
    No
  • Bias Voltage
    24 V
  • Cut-off Frequency
    200 MHz
  • Dark Current
    <10nA
  • Junction Capacitance
    <25 pF
  • Measurement Type
    Beam shape, frequency
  • Reverse Breakdown
    150 V
  • NEP
    <0.1 pW/√Hz
  • Fall Time
    3ns
  • Saturation Current
    2.5 mA
  • Thread Type
    8-32 and M4