Photodiode Energy Sensor, Silicon, 0.19 -1.1 μm, 15 µJ, 20 kHz

Technical Specs

  • Detector Type
    Silicon Photodiode
  • Spectral Range
    0.19 to 1.1 µm
  • Sensor Size
    Ø10 mm
  • Maximum Repetition Rate
    20 kHz
  • Maximum Pulse Width
    5 µs
  • Maximum Pulse Energy
    15 µJ @ <300 nm, 8 µJ @ 350-550 nm, 5 µJ @ >800 nm
  • Maximum Average Power
    50 mW
  • Noise Equivalent Energy
    0.05 nJ
  • Cooling
    Sensor Body
  • Connector Type
    DB15
  • Reflectance
    50% approx.
  • Operating Temperature
    15°C to 35°C, <70% RH, non-condensing
  • Storage Temperature
    0°C to 50°C, <90% RH
  • Dimensions
    Ø62 x 22 mm
  • Weight
    0.25 kg
  • RoHS
    Compliant
  • Calibration Uncertainty
    ±8% < 250 nm, ±5% @ 251 - 950 nm, ±7% < 951 nm
  • Damage Threshold
    0.1 J/cm2
  • Linearity
    ±1.5% for >10% full scale