UV Silicon Detector, 200-1100 nm, OD3 Attenuator, DB15

Technical Specs

  • Detector Type
    High Performance
  • Sensor Size
    Ø11.3 mm
  • Spectral Range
    200 - 1100 nm
  • Maximum Measurable Power
    0.2 W (200-400 nm); 50 mW (400-1100 nm)
  • Maximum Measurable Power Without Attenuator
    0.3 mW (200 - 400 nm); 0.1 mW (400 - 600 nm, >1050 nm) , 0.07 mW (600 - 1050 nm)
  • Maximum Power Density
    30 W/cm2
  • Maximum Power Density without Attenuator
    0.2 W/cm2  
  • Maximum Pulse Energy with Attenuator
    500 nJ
  • Maximum Pulse Energy Without Attenuator
    0.5 nJ
  • Calibration Uncertainty without Attenuator
    ±4% @ 200-219nm, ±2% @ 220-349nm, 1% @ 350-949nm, 4% @ 950-1100 nm
  • Calibration Uncertainty With Attenuator
    ±8% @ 200-219nm, ±2% @ 220-349nm, 1% @ 350-949nm, 4% @ 950-1100nm
  • Linearity
    ±0.5 %
  • Uniformity
    ±2 %
  • Material
    UV Enhanced Silicon
  • Rise Time
    ≤5.9 µs
  • Operating Temperature Range
    5 to 50°C, <70% RH
  • Attenuator
    OD3, Built-in
  • Connector Type
    DB15
  • RoHS
    Compliant
  • Minimum Detectable Power
    20 pW (1936-R/2936-R), 100 pW (1830-R, 843-R, 1919-R, 841-PE-USB), 5 nW (1918-R)
  • Clear Aperture
    10.3 mm