Optical Power Detector, Silicon, 400-1100 nm, OD2 Attenuator, DB15

Technical Specs

  • Detector Type
    High Performance
  • Sensor Size
    Ø11.3 mm
  • Spectral Range
    400 - 1100 nm
  • Maximum Measurable Power
    400 mW with 1830-R and 1936-R, 250 mW with 843-R, 1919-R, and 841-PE-USB
  • Maximum Measurable Power Without Attenuator
    4 mW with 1830-R and 1936-R, 2.5 mW with 843-R, 1919-R, and 841-PE-USB
  • Maximum Power Density
    30 W/cm2
  • Maximum Power Density without Attenuator
    3 W/cm2  
  • Maximum Pulse Energy with Attenuator
    500 nJ
  • Maximum Pulse Energy Without Attenuator
    5 nJ
  • Calibration Uncertainty without Attenuator
    ±1% @ 400-940nm, ±4% @ 941-1100 nm
  • Calibration Uncertainty With Attenuator
    ±1% @ 400-940nm, ±4% @ 941-1100nm
  • Linearity
    ±0.5 %
  • Uniformity
    ±2 %
  • Material
    Silicon
  • Rise Time
    ≤2 µs
  • Operating Temperature Range
    5 to 50°C, <70% RH
  • Attenuator
    OD2, Built-in
  • Connector Type
    DB15
  • RoHS
    Compliant
  • Minimum Detectable Power
    20 pW (1936-R/2936-R), 100 pW (1830-R, 843-R, 1919-R, 841-PE-USB), 5 nW (1918-R)
  • Clear Aperture
    10.3 mm