Power Detector, Wand-Style, UV-Silicon, 200-1100 nm, OD3, DB15

Technical Specs

  • Detector Type
    Wand Style
  • Detector Input
    Free Space
  • Detector Material
    UV Enhanced Silicon
  • Spectral Range
    200 - 1100 nm
  • Sensor Size
    10 x 10 mm
  • Attenuator
    OD3, Built-in
  • Maximum Measurable Power
    200 mW
  • Minimum Measurable Power
    20 pW
  • Maximum Measurable Power Without Attenuator
    0.3 mW (200 - 400 nm); 0.1 mW (400 - 600 nm, >1050 nm) , 0.07 mW (600 - 1050 nm)
  • Maximum Power Density
    30 W/cm2
  • Maximum Power Density without Attenuator
    0.2 W/cm2  
  • Maximum Pulse Energy Without Attenuator
    0.5 nJ
  • Maximum Pulse Energy
    0.5 µJ
  • Calibration Module
    Removable DB15 Connector
  • Calibration Uncertainty without Attenuator
    4% @ 200-219nm
    2% @ 220-349nm
    1% @ 350-949nm
    4% @ 950-1100 nm
  • Calibration Uncertainty With Attenuator
    8% @ 200-219nm
    2% @ 220-349nm
    1% @ 350-949nm
    4% @ 950-1100nm
  • Linearity
    ±0.5 %
  • Uniformity
    ±2 %
  • Rise Time
    ≤3 µs
  • Connector Type
    DB15
  • Cable Length
    1.5 m
  • Operating Temperature Range
    5 to 50°C
  • Operating Humidity
    <70% RH