| Model | | | | |
| Spectral Range (µm) | 0.2-1.1 | 0.4-1.1 | 0.78-1.8 | 0.8-1.65 |
| Power, Average Max w/ Attenuator (W/cm2)(1) | 0.2 | 2 | 2 | 2 |
| Power, Average Maximum w/o Attenuator (mW/cm2)(1) | 0.2 | 2 | 3 | 3 |
| Pulse Energy, Maximum - w/ Attenuator (µJ/cm2)(2) | 0.10 | 1 | 0.35 | 0.35 |
| Pulse Energy, Maximum - w/o Attenuator (nJ/cm2)(2) | 0.1 | 1 | 0.35 | 0.35 |
| Calibration Uncertainty (Without Attenuator)(4) | 4% @ 200-219nm, 2% @ 220-349nm, 1% @ 350-949nm, 4% @ 950-1100nm | 1% @ 400-920nm, 4% @ 921-1100nm | 2% @ 780-1700nm, 4% @ 1701-1800nm | 2% @ 800-1650nm |
| Calibration Uncertainty (With Attenuator)(4) | 8% @ 200-350nm, 2% @ 351-390nm, 1% @ 391-920nm, 4% @ 921-1100nm | 1% @ 400-920nm, 4% @ 921-1100nm | 5% @ 780-910nm, 2% @ 911-1700nm, 4% @ 1701-1800nm | 5% @ 800-900nm, 2% @ 901-1650nm |
| Uniformity (%)(3) | ±2 | ±2 | ±2 | ±2 |
| Linearity (%) | ±0.5 | ±0.5 | ±0.5 | ±0.5 |
| Saturation Current Density (mA/cm2) | 0.05 | 4.6 | 400 | 250 |
| Responsivity | ≥0.09 A/W 2501000 nm | >0.1 A/W 4001000 nm | ≥0.2 A/W 8501700 nm | ≥0.1 A/W 8001600 nm |
| Responsivity (Peak) | >0.4 A/W @ 2501000 nm | >0.5 A/W @ 4001000 nm | >0.8 A/W @ 8501700 nm | >0.9 A/W @ 8001600 nm |
| Rise Time (µs) | ≤2 | ≤2 | ≤2 | ≤2 |
| Shunt Resistance (MΩ) (typ) | ≥2 | ≥2 | ≥35 | ≥20 |
| Die Capacitance (pF) | 8,800 | 12,000 | 14 nF | 1500 |
| Reverse Bias, Maximum (V) | 100 | 10 | 0.25 | 2 |
| NEP (pW/√Hz) | 0.89 | 0.55 | 0.7 | 0.03 |
| Material | Silicon | Silicon | Germanium | Indium Gallium Arsenide |
| Active Area (cm2) | 1 | 1 | 0.071 | 0.071 |
| Active Diameter (cm) | 1.13 | 1.13 | 0.3 | 0.3 |
| Shape | Cylinder | Cylinder | Cylinder | Cylinder |
| Attenuator, OD3 | Detachable | Detachable | Detachable | Detachable |