New! Now available are 5.3" UV integrating sphere detector Models, 819C-UV-5.3-CAL and 819D-UV-5.3-CAL! Also the new 819C-SL-2-CAL2 and 819D-SL-2-CAL2 can handle more than 4 watts of optical power!
Newport’s calibrated integrating sphere detectors consist of the 819C and 819D series integrating spheres, configured to measure diverging or collimated light sources, respectively, and either a Si, UV-enhanced or an InGaAs detector. The integrating sphere is an ideal tool for measuring high power or diverging light sources using a photodiode. The available sphere sizes are between 2” and 5.3” sphere sizes.
The spheres with a silicon detector are suitable for the measurements ranging from 400 – 1100 nm, while the models with an InGaAs detector are suitable for aproximately 800 – 1650 nm range. The UV version is optimized for wavelengths between 250 - 400 nm, but it is calibrated up to 1100 nm. All the spheres come with an SMA fiber optic connector on the North pole as a standard feature, allowing a small amount of light pickoff for wavelength measurement or any further analysis without affecting the overall system calibration.
Note that the system calibration is no longer valid if any component is changed from the original calibrated configuration. For a very high power level, elevated temperature of the integrating sphere system can affect the measurement accuracy, so the sphere must be temperature controlled. We recommend that the system be calibrated every year, along with the optical power meter.
For individual integrating spheres and accessories see Integrating Sphere Components.
Full NIST traceable calibration is offered for the sphere systems listed in the Models tab.
The 1830-R is an ideal meter for use with our integrating sphere sensors.
Divergent vs. Collimating Beam Input Considerations
One of the major advantages of using an integrating sphere is to diffuse the input beam so that the detector readings are insensitive to errors caused by detector positioning or problems associated with overfilling, or saturation of the active area of the detector. The detector should see a completely diffused input field. Then, a key technical consideration, when deciding which configuration one has to choose, is whether the input beam will directly hit the detector, influencing the optical power at the detector. For this purpose, each integrating sphere includes a baffle.
819D integrating sphere configuration is ideal for divergent beam source such as an output beam from a laser diode.
819C integrating sphere configuration is ideal for a collimated beam source such as a collimated laser beam.
Specifications
|
Model |
Spectral Range |
Calibration Uncertainty |
Power Range |
Sphere Size |
Input Port Size |
Detector Type |
| 819C-UV-5.3-CAL
|
250 to 1100 nm |
2% @ 250-300 nm
3% @ 301 – 850 nm
4% 851 - 1100 nm |
100 nW - 500 mW @ 400 nm |
5.3 in. |
1.0 in. |
UV-enhanced Silicon |
| 819C-SL-2-CAL
|
400 to 1100 nm |
2.5% @ 400 - 1000 nm
3% 1001 - 1100 |
100 nW - 150 mW |
2 in. |
0.5 in. |
Silicon |
| 819C-SL-2-CAL2
|
2.5% @ 400 - 1000 nm
3% 1001 - 1100 nm |
100 nW - 4 W |
2 in. |
0.5 in. |
| 819C-SL-3.3-CAL
|
1.5% @ 400-550 nm
1% @ 551 – 950 nm
1.5% 951 - 1010 nm
3% 1011 - 1100 |
100 nW - 300 mW |
3.3 in. |
1.0 in. |
| 819C-SL-5.3-CAL
|
1.5% @ 400-470 nm
1% @ 471 – 830 nm
1.5% 831 - 1000 nm
3% 1001 - 1100 nm |
100 nW - 700 mW |
5.3 in. |
| 819C-IG-2-CAL
|
800 to 1650 nm |
5% @ 800-910 nm
2% @ 911-1650 |
100 nW - 1.5 W |
2 in. |
0.5 in. |
InGaAs |
| 819C-IG-3.3-CAL
|
910 to 1650 nm |
5% @ 910-950 nm
2% @ 951-1650 |
100 nW - 3.5 W |
3.3 in. |
1.0 in. |
| 819C-IG-5.3-CAL
|
860 to 1650 nm |
5% @ 860-920 nm
2% @ 921-1650 |
1 µW - 4.5 W |
5.3 in. |
| 819D-UV-5.3-CAL
|
250 to 1100 nm |
2% @ 250-300 nm
3% @ 301 – 850 nm
4% 851 - 1100 nm |
100 nW - 500 mW @ 400 nm |
5.3 in. |
1.0 in. |
UV-enhanced Silicon |
| 819D-SL-2-CAL
|
400 to 1100 nm |
2.5% @ 400 - 1000 nm
3% 1001 - 1100 nm |
100 nW - 150 mW |
2 in. |
0.5 in. |
Silicon |
| 819D-SL-2-CAL2
|
2.5% @ 400 - 1000 nm
3% 1001 - 1100 nm |
100 nW - 4 W |
2 in. |
| 819D-SL-3.3-CAL
|
1.5% @ 400-440 nm
1% @ 441 – 950 nm
1.5% 951 - 1000 nm
3% 1001 - 1100 |
100 nW - 300 mW |
3.3 in. |
| 819D-SL-5.3-CAL
|
1.5% @ 400-440 nm
1% @ 441 – 970 nm
1.5% 971 - 1010 nm
3% 1011 - 1100 |
100 nW - 700 mW |
5.3 in. |
| 819D-IG-2-CAL
|
910 to 1650 nm |
5% @ 910-960 nm
2% @ 961-1650 |
100 nW - 1.5 W |
2 in. |
InGaAs |
| 819D-IG-3.3-CAL
|
910 to 1650 nm |
5% @ 910-950 nm
2% @ 951-1650 |
100 nW - 3.5 W |
3.3 in. |
| 819D-IG-5.3-CAL
|
930 to 1650 nm |
5% @ 930-950 nm
2% @ 951-1650 |
1 µW - 4.5 W |
5.3 in. |
Maximum Power Calculation
Plot of the maximum power (red) and the typical responsivity (blue), as a function of wavelength, of Model 819C-UV-5.3-CAL.
One key specification in calculating the maximum power handling capability is the saturation current density. A typical value of a UV silicon detector is approximately 100 uA/cm2. Dividing the detector responsivity, R, by the saturation current density will result in the saturation power density. Since the detector responsivity is wavelength dependent, so is the saturation power level, as shown in the plot. When the responsivity is the maximum, the maximum power before saturation is the lowest. Also make sure to have a proper heat sink to the sphere for the most accurate measurement, when working with a high power light source.
